Bi2O2Se-Based Bimode Noise Generator for the Application of Generative Adversarial Networks

Bo Liu, XingYi Zheng, Dharmendra Verma, Yudi Zhao, Hanyuan Liang, Lain-Jong Li, Jenhui Chen, Chao-Sung Lai

ACS Applied Materials & Interfaces, 15(42), 49478-49486.

Semiconductor structure, method of forming stacked unit layers and method of forming stacked two-dimensional material layers

Shin-Wei Shen, CHEN Tse-An, Tung-Ying Lee, Lain-Jong Li

U.S. Patent 11,784,225[P]. 2023-10-10.

Semiconductordevice with two-dimensional materials

CHEN Tse-An, Lain-Jong Li

US Patent App. 18/316,096

Method ofmanufacturing semiconductor devices including the steps of removing a plurality of spacers that surrounds each of the plurality of nanotubes into a layer of nanotubes, and forming gate dielectric and/or gate electrode.
Tzu-AngChaoGregory Michael PitnerTse-An CHENLain-Jong LiYu Chao Lin
U.S. Patent 11,749,528[P]. 2023-9-5.

Pieces of 2Dmaterials: The next step to crystallize the polycrystalline domains

Jui-Han Fu, YichenCai, Jie Shen, Hayato Sugisaki, Kohei Nanjo, Karin To, Chia-Wen Wu, Yu Han, Lain-Jong Li, Vincent Tung

Matter (2023) https://doi.org/10.1016/j.matt.2023.05.034

InterfacialReconstructed Layer Controls the Orientation of Monolayer Transition-Metal Dichalcogenides

Areej Aljarb*,Jiacheng Min, Mariam Hakami, Jui-Han Fu, Rehab Albaridy, Yi Wan, Sergei Lopatin, Dimitrios Kaltsas, Dipti Naphade, Emre Yengel, Mohamed Nejib Hedhili, Roaa Sait, Abdul-Hamid Emwas, Arwa Kutbee, Merfat Alsabban, Kuo-Wei Huang, Kaimin Shih, Leonidas Tsetseris, Thomas D. Anthopoulos, Vincent Tung*, and Lain-Jong Li*

ACS Nano (2023) https://doi.org/10.1021/acsnano.2c12103

Area-SelectiveGrowth of Two-Dimensional Mono- And Bilayer WS2 for Field Effect Transistors

Lin-Yun Huang,Ming-Yang Li, San-Lin Liew, Shih-Chu Lin, Ang-Sheng Chou, Ming-Chun Hsu,
Ching-Hao Hsu, Yu-Tung Lin, Po-Sen Mao, Duen-Huei Hou, Wei-Cheng Liu, ChihI Wu, Wen-Hao Chang, Han Wang, Lain-Jong Li*, and Kung-Hwa Wei*

ACS Materialsletter (2023) https://doi.org/10.1021/acsmaterialslett.3c00094

Engineering grainboundaries in monolayer molybdenum disulfide for an efficient water/ion separation

Yu Han, Jie Shen,Areej Aljarb, Yichen Cai, Xing Liu, Jiacheng Min, Yingge Wang, Chenhui Zhang, Cailing Chen, Marim Hakami, Jui-Han Fu, Hui Zhang, Guanxing Li, Xiaoqian Wang, Zhuo Chen, Jiaqiang Li, Xinglong Dong, Vincent Tung, Guosheng Shi, Ingo Pinnau, Lain-Jong Li

Research SquarePlatform LLC (2023) https://doi.org/10.21203/rs.3.rs-2630063/v1

Semiconductordevice and manufacturing method thereof

Ming-Yang Li,Lain-Jong Li, YEH Han, Wen-hao Chang

US Patent App.17/984,246

Semiconductorstructure, method of forming stacked unit layers and method of forming stacked two-dimensional material layers

Shin-Wei Shen,CHEN Tse-An, Tung-Ying Lee, Lain-Jong Li

US Patent App.17/460,329

Field effecttransistor using transition metal dichalcogenide and a method for forming the same

MY Li, LJ Li, CChih-Piao

US Patent 11,581,185

Epitaxialsubstitution of metal iodides for low-temperature growth of two-dimensional metal chalcogenides

Kenan Zhang,Yihong She, Xiangbin Cai, Mei Zhao, Zhenjing Liu, Changchun Ding, Lijie Zhang, Wei Zhou, Jianhua Ma, Hongwei Liu, Lain-Jong Li, Zhengtang Luo, Shaoming Huang

Nature Nanotechnology (2023) https://doi.org/10.1038/s41565-023-01326-1

Oriented lateralgrowth of two-dimensional materials on c-plane sapphire

Jui-Han Fu,Jiacheng Min, Che-Kang Chang, Chien-Chih Tseng, Qingxiao Wang, Hayato Sugisaki, Chenyang Li, Yu-Ming Chang, Ibrahim Alnami, Wei-Ren Syong, Ci Lin, Feier Fang, Lv Zhao, Tzu-Hsuan Lo, Chao-Sung Lai, Wei-Sheng Chiu, Zih-Siang Jian, Wen-Hao Chang,

Yu-Jung Lu, KaiminShih, Lain-Jong Li, Yi Wan, Yumeng Shi & Vincent Tung

NatureNanotechnology (2023) https://doi.org/10.1038/s41565-023-01445-9

Materials & Technologies for Future Electronics

Led by Lain-Jong (Lance) Li Moving from HKU to NUS Singapore

Led by Lain-Jong (Lance) Li
Moving from HKU to NUS Singapore