Scaling two-dimensional semiconductor nanoribbons for high-performance electronics.

Hao-Yu Lan, Shao-Heng Yang, Yongjae Cho, Yuanqiu Tan, Jun Cai, Zheng Sun, Chenyang Li, Lin-Yun Huang, Yi Wan, Lain-Jong Li, Thomas Beechem, Joerg Appenzeller & Zhihong Chen

Nat Commun 17, 7386 (2026). https://doi.org/10.1038/s41467-026-74342-z

Multifunctional Single-Transistor Architecture Enabled by Nonvolatile Band Rearrangement in 2D Ferroelectric Tunneling Junction.

Jialin Yang, Chuyao Chen, Zuyun Chen, Xuemin Hu, Lain-Jong Li, Shengli Zhang

Nano Lett. 2026; 26 (33): 11136–11144. https://doi.org/10.1021/acs.nanolett.6c02966

Growth of Low-Defect WSe2 Film via High-Purity van der Waals Crystal Precursor.

Hang Liu, Ni Yang, Jiacheng Min, Mykola Telychko, Caisheng Tang, Yi Wan, Chuanqi Zhang, Wanying Li, Lin-Yun Huang, Chengdong Yao, Hoyeon Jeon, Jiahao Liu, Zhengwei Zhang, Xiangdong Yang, George Harrison, Zhongzhe Liu, Tianchao Guo, Jing-Kai Huang, Shadi Fatayer, Kaimin Shih, Song Liu, Thomas D. Anthopoulos, Kian Ping Loh, Lain-Jong Li, Xu Lu; ACS Nano 2026; 20 (12): 9961–9969. https://doi.org/10.1021/acsnano.5c21076

High-performance tunnel FETs exhibiting boosted sub-Boltzmann-limit ON-current up to 10 μA/μm

Zehan Wu, Ke Yang, Wanqing Meng, Weizhen Wang, Yifei Zhao, Fumei Yang, Ran Ding, Hui Li, Songhua Cai, Ming Yang, Jiannong Wang, Lain-Jong Li, and Jianhua Hao

Science (2026) DOI: 10.1126/science.adx6059

Ultra-low-power complementary field-effect transistors enabled by 2D semiconductor-single crystal high-κ dielectric integration

Ni Yang, Ji Zhang, Yu-Cheng Lu, Zeheng Wang, Yu-Ming Chang, Fangyuan Zheng, Zi-Liang Yang, Lingqi Li, Ang-Sheng Chou, Zongmeng Yang, Haomin Liu, Lin-Yun Huang, Chenyang Li, Chengdong Yao, Pengfei Yang, Wanying Li, Wanqing Meng, Ming-Yang Li, Chao-Ching Cheng, Dong-Keun Ki, Ya-Ping Chiu, Kah-Wee Ang, Geng-Chiau Liang, Yi Wan, Yee Sin Ang, Iuliana P. Radu, Vita Pi-Ho Hu, Sean Li, Jing-Kai Huang & Lain-Jong Li*

Nature (2026) Revision

Wafer-Scale Single-Crystal WSe2 Monolayers Using Substrate-Passivation-Driven Epitaxy

Lin-Yun Huang, Yu-Wei Hsu, Fangyuan Zheng, Jiacheng Min, Ni Yang, Haomin Liu, Jiayi Cai, Shao-Heng Chen, Jing-Kai Huang, Zhengtang Luo, Chih-I Wu, Kung-Hwa Wei, Lain-Jong Li, and Yi Wan*

ACS Nano 2026 20 (2), 2104-2113

Growth of Low-Defect WSe2 Film via High-Purity van der Waals Crystal Precursor

Hang Liu, Ni Yang, Jiacheng Min, Mykola Telychko, Caisheng Tang, Yi Wan, Chuanqi Zhang, Wanying Li, Lin-Yun Huang, Chengdong Yao, Hoyeon Jeon, Jiahao Liu, Zhengwei Zhang, Xiangdong Yang, George Harrison, Zhongzhe Liu, Tianchao Guo, Jing-Kai Huang, Shadi Fatayer, Kaimin Shih, Song Liu, Thomas D. Anthopoulos, Kian Ping Loh, Lain-Jong Li, and Xu Lu*

ACS Nano 2026 20 (12), 9961-9969

Direct evaporation of single-crystal metalcontacts for 2D semiconductors
Ying Zhang, Chang Liu, Huiting Wang,Guichen Teng,Yilu Qin,Wencheng Niu,Shuimei Ding,Binmin Wu, Shuaiqin Wu,Yan Chen,Ni Yang,Tie Lin,Hong Shen,Xiangjian Meng1,Yuan Liu,Xuming Zou,Xudong Wang, Lei Liao^,Junhao Chu,Lain-Jong Li* & Jianlu Wang*
Science (2026) DOI: 10.1126/science.aee3132

Directly Probing Carrier Transfer Length in Contacts of Two-Dimensional Transistors

Zi-Liang Yang, Bo-Chao Huang, Yu-Kuan Lin, Yan-Ruei Lin, Hung-Chang Hsu, Hao Yu Chen, Yi Wan, Kai-Wei Tseng, Shu-Ting Yang, Han-Chieh Lo, You-Jia Huang, Fangyuan Zheng, Ni Yang, Wanqing Meng, Jiacheng Min, Po-Cheng Huang, Yann-Wen Lan, Lain-Jong Li & Ya-Ping Chiu*

Nature (2026) 655, 350–356

From Materials to Electronics: A Personal Journey through Nano Letters.

Lain-Jong Li

Nano Letters (2026) DOI: 10.1021/acs.nanolett.5c06476

Sb-Contacted MoS2 Flash Memory Enables Ultra-efficient In-memory Computing in Analogue Content Addressable Memory.

Guoyun Gao, Bo Wen, Ni Yang, Zhiyuan Du, Mingrui Jiang, Ruibin Mao, Yingnan Cao, Hongxia Xue, Deng Zou, Pak San Yip, Qihan Liu, Yi Wan, Dong-Keun Ki, Jinyao Tang, Paddy K. L. Chan, Hao Jiang, Han Wang, Lain-Jong Li, Can Li

Nature Nanotechnology, (2026) https://doi.org/10.1038/s41565-025-02089-7

Computational Design of Two-Dimensional MA₂Z₄ FamilyField-Effect Transistor for Future Ångström-Scale CMOS Technology Nodes.

Che Chen Tho, Zongmeng Yang, Shibo Fang, Shiying Guo, Liemao Cao, Chit Siong Lau, Fei Liu, Shengli Zhang, Jing Lu, L. K. Ang, Lain-Jong Li, Yee Sin Ang*

InfoMat (2026) DOI: 10.1002/inf2.70096

Wafer-scale Two-channel Monolayer-MoS2 Nanosheet FETs with Record-high Ion>2 mA/μm Enabled by Sub-1 nm CET High-κ integration

Haofei Zheng, Lingqi Li, Wanqing Meng,Yi-Hsin Tu, Chenyang Li, Sujuan Ding, Ziming Fu, Mingxi Chen, Dongzhi Chi, Chuanhong Jin, Gengchiau Liang, Lain-Jong Li, Kah-Wee Ang*

VLSI (2026)

Fermi-Level Depinning Achieved by High-Work-Function Au1_-xSexAlloy Contacts for High-Performance p-Type WSe2Transistors

WanyingLi ^, Yipu Xia*, Yuanhao Kou, Hai Wang, Shaogang Xu, YujiaDeng, Tianyuan Chen, Sujuan Ding, Lin-YunHuang, Fangyuan Zheng, Ni Yang, WanqingMeng, Chengdong Yao, Dong-Keun Ki, Hu Xu,Bo Wang, Chuanhong Jin, Junqiu Zhang, MaohaiXie*^, Lain-Jong Li*

Nature Comm. (2026) accepted

Zehan Wu, Ke Yang, Wanqing Meng, Weizhen Wang, Yifei Zhao, Fumei Yang, Ran Ding, Hui Li, Songhua Cai, Ming Yang, Jiannong Wang, Lain-Jong Li*, and Jianhua Hao*

Lin-Yun Huang, Yu-Wei Hsu, Fangyuan Zheng, Jiacheng Min, Ni Yang, Haomin Liu, Jiayi Cai, Shao-Heng Chen, Jing-Kai Huang, Zhengtang Luo, Chih-I Wu, Kung-Hwa Wei*, Lain-Jong Li*, and Yi Wan*

Materials & Technologies for Future Electronics

Led by Lain-Jong (Lance) Li Materails Sciecne & Engineering National University of Singapore

Led by Lain-Jong (Lance) Li
Materails Sciecne & Engineering National University of Singapore