Materials & Technologies for Future Electronics
Materials & Technologies for Future Electronics
Led by Lain-Jong (Lance) Li
(Chair Professor, University of Hong Kong)
Led by Lain-Jong (Lance) Li
(Chair Professor, University of Hong Kong)
Materials Growth and Characterizations
Furnace CVD for growing 2D layer semiconductors
We have at least 4 systems for growing different materials
PLD for high-k dielectrics
We intend to develop high-quality and large-area ultra-high dielectric constant insulators
Confocal Raman spectroscopy
A high resolution Raman and PL mapping system, equipped with temperature control system
High-Vacuum thermal deposition for metals
Deposition of high-quality metals for high-performance devices
MOCVD for 2D semiconductors
Growth of wafer-scale 2D semiconductors
AFM
Topographic measurement for nanostructures
2D materials Transfer System
Transfer of 2D materials onto desired substrates
LED lithography
Patterning devices with simple LED projection
Device Fabrication and Measurements
Cryogenic probe station
The system provides He close-cycle cooling environments for electrical measurements.
Semiconductor parameter analyzer
2-probe and 4-probe transistor and capacitor measurements
LED direct-write lithographic system
Simple lithographic system for writing <2um features
2D materials Transfer Stage
For making 2D materials hetero-stacks
