What are our contributions to this field ?
In 2012, we first invented the growth of single-crystal monolayer MoS2 using scalable chemical vapor deposition (CVD). We also showed the great potential of using 2D semiconductors in flexible electronics. This innovative CVD method enables the demonstration of most critical 2D semiconductor-based n-type and p-type transistor devices, stimulating many other researchers to work in this field.
This group has decent studies on he growth fundamentals. This team has discovered growth mechanisms and proposed the “atomic edge epitaxy model” that enables the lateral growth of p-n junction, and the growth of single-crystal semiconductors.
His team has also found a way to replace the top-layer S atoms of MoS2 by Se atoms to form a vertically asymmetric 2D layer Se-Mo-S that can not be formed naturally.
During his directorship in Corporate Research at TSMC, his team proposed how 2D materials can be used to extend Moore’s Law for future electronics. His team also developed the scalable growth of 2-inch wafer-level single-crystal hexagonal boron nitride (hBN), which is a critical 2D insulator to protect 2D semiconductors.
Meanwhile, he and collaborators have attacked a few key issues in the field of 2D electronics including: (1) growth of wafer-scale monolayer hBN insulators (2) Comprehending that the semimetal can serve as good contact metals for 2D semiconductors. (3) Integrating ultrahigh-k dielectrics with 2D semiconductors to enhance the gating efficiency for critical short-channel devices.